1 ELM34409AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-case rjc 25 c /w maximum junction-to-ambient rja 50 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 25 v continuous drain current ta=25c id -9 a ta=70c -7 pulsed drain current idm -50 a 3 avalanche current ias -26 a avalanche energy l=0.1mh eas 34 mj power dissipation ta=25c pd 2.5 w ta=70c 1.6 junction and storage temperature range tj, tstg -55 to 150 c ELM34409AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-9a ? rds(on) < 20m (vgs=-10v) ? rds(on) < 35m (vgs=-4.5v) 4 - pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 single p-channel mosfet s g d
2 ELM34409AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v,vgs= 0v, tj=125c -10 gate-body leakage current igss vds=0v, vgs= 25v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -3.0 v on state drain current id(on) vgs=-10v, vds=-5v 9 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 9a 15 20 m 1 vgs =- 4.5v, id =-7 a 25 35 forward transconductance gfs vds =-1 0v, id =-9 a 24 s 1 diode forward voltage vsd if =- 1a, vgs=0v -1.2 v 1 max. body -diode continuous current is -2.1 a dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 1610 pf output capacitance coss 410 pf reverse transfer capacitance crss 200 pf gate resistance rg vgs=15mv, vds=0v, f=1mhz 3.7 switching parameters total gate charge qg vgs=-10v, vds=-15v id=-9a 31.4 nc 2 gate-source charge qgs 4.5 nc 2 gate-drain charge qgd 8.2 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-1a, rl=1, rgen=6 5.7 ns 2 turn - on rise time tr 10.0 ns 2 turn - off delay time td(off) 18.0 ns 2 turn - off fall time tf 5.0 ns 2 ta=25 c single p-channel mosfet 4 - note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature.
3 typical electrical and thermal characteristics p-channel logic level enhancement mode field effect tra nsistor p2003evg sop-8 halogen-free & lead-free niko-sem 3 feb-05-2009 rev 0.9 body diode forward voltage variation with source current and temperature 25 c 0.6 0.1 0.0001 0 0.001 0.01 sd 0.2 0.4 v = 0v 10 1 100 t = 125 c a gs 0.8 1.0 -55 c 1.2 -is - reverse drain current(a) -v - body diode forward voltage(v) ELM34409AA-N single p-channel mosfet 4 -
4 p-channel logic level enhancement mode field effect tra nsistor p2003evg sop-8 halogen-free & lead-free niko-sem 4 feb-05-2009 rev 0.9 single p-channel mosfet 4 - ELM34409AA-N
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